• DocumentCode
    1618342
  • Title

    Nature of hot carrier damage in spacer oxide of LDD n-MOSFETs

  • Author

    Manhas, S.K. ; Sekhar, D. Chandra ; Oates, A.S. ; De Souza, M.M.

  • Author_Institution
    Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
  • Volume
    2
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    735
  • Lastpage
    739
  • Abstract
    The nature of hot carrier degradation of spacer oxide in LDD n-channel MOSFETs with stress time of the order of microseconds is investigated. It is seen that, under Vg~Vt and I submax stress conditions, the damage is caused by interface state generation. Under the Vg=Vd condition, the damage is attributed to two different interface generation mechanisms with some contribution from electron trapping
  • Keywords
    MOSFET; electron traps; hot carriers; interface states; semiconductor device testing; LDD n-MOSFETs; charge pumping measurements; electron trapping; hot carrier degradation; interface generation mechanisms; interface state generation; series resistance degradation; spacer oxide; stress conditions; CMOS technology; Degradation; Electrical resistance measurement; Electron traps; Hot carriers; Immune system; Interface states; MOSFET circuits; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2002. MIEL 2002. 23rd International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-7235-2
  • Type

    conf

  • DOI
    10.1109/MIEL.2002.1003362
  • Filename
    1003362
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1618342