Title :
Process-induced charge trapping and junction breakdown instability in deep trench isolation for high voltage Smart Power IC process
Author :
Hee-dae Kim ; Ju-Won Park ; Choul-Joo Ko ; Bon-Keun Jun ; Namchil Moon ; KyungWook Kwon ; Changjun Lee ; Kunsik Sung ; Nam-Joo Kim ; Kwang-Dong Yoo ; Yoon-Jong Lee
Author_Institution :
Analog Foundry Process Dev. Team, Dongbu Hitek, Bucheon, South Korea
Abstract :
In BCD process for high voltage Smart Power IC, junction breakdown instability in DTI(Deep Trench Isolation) process is strongly depend on the process-induced mechanical stress and DTI test pattern shape. The DTI test pattern with sharp corner generates larger charge trap density and larger breakdown voltage shift than that of round corner test pattern. Through 3D TCAD simulation and SEM/TEM analysis, we noticed that sharp corner type has higher process-induced mechanical stress and more silicon dislocation defect than that of round corner type.
Keywords :
automatic test pattern generation; dislocations; isolation technology; mechanical stability; power integrated circuits; scanning electron microscopy; semiconductor device breakdown; technology CAD (electronics); transmission electron microscopy; 3D TCAD simulation; BCD process; DTI process; DTI test pattern shape; SEM analysis; TEM analysis; breakdown voltage shift; charge trap density; deep trench isolation; high voltage smart power IC process; junction breakdown instability; process-induced charge trapping; process-induced mechanical stress; round corner test pattern; round corner type; sharp corner type; silicon dislocation defect; Charge carrier processes; Diffusion tensor imaging; Electric breakdown; Junctions; Shape; Silicon; Stress; Avalanche junction breakdown; Charge trapping; DTI(Deep Trench Isolation); Walkout;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482808
