Process-induced charge trapping and junction breakdown instability in deep trench isolation for high voltage Smart Power IC process

Author

Hee-dae Kim ; Ju-Won Park ; Choul-Joo Ko ; Bon-Keun Jun ; Namchil Moon ; KyungWook Kwon ; Changjun Lee ; Kunsik Sung ; Nam-Joo Kim ; Kwang-Dong Yoo ; Yoon-Jong Lee

Author_Institution

Analog Foundry Process Dev. Team, Dongbu Hitek, Bucheon, South Korea

fYear

2012

Firstpage

1

Lastpage

4

Abstract

In BCD process for high voltage Smart Power IC, junction breakdown instability in DTI(Deep Trench Isolation) process is strongly depend on the process-induced mechanical stress and DTI test pattern shape. The DTI test pattern with sharp corner generates larger charge trap density and larger breakdown voltage shift than that of round corner test pattern. Through 3D TCAD simulation and SEM/TEM analysis, we noticed that sharp corner type has higher process-induced mechanical stress and more silicon dislocation defect than that of round corner type.

Keywords

automatic test pattern generation; dislocations; isolation technology; mechanical stability; power integrated circuits; scanning electron microscopy; semiconductor device breakdown; technology CAD (electronics); transmission electron microscopy; 3D TCAD simulation; BCD process; DTI process; DTI test pattern shape; SEM analysis; TEM analysis; breakdown voltage shift; charge trap density; deep trench isolation; high voltage smart power IC process; junction breakdown instability; process-induced charge trapping; process-induced mechanical stress; round corner test pattern; round corner type; sharp corner type; silicon dislocation defect; Charge carrier processes; Diffusion tensor imaging; Electric breakdown; Junctions; Shape; Silicon; Stress; Avalanche junction breakdown; Charge trapping; DTI(Deep Trench Isolation); Walkout;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482808

Filename

6482808