Title :
Temperature response of irradiated MOSFETs
Author :
Lornakin, S.S. ; Zebrev, G.I. ; Ivashin, D.V.
Author_Institution :
Dept. of Microelectron., Moscow Eng. Phys. Inst., Russia
fDate :
6/24/1905 12:00:00 AM
Abstract :
It was shown experimentally that above threshold transconductance in investigated n-MOSFETs degrades after irradiation and short-term anneal only in subthreshold and moderate inversion regions. Subsequent durable anneal degrades transconductance on the whole operating gate bias range.
Keywords :
MOSFET; annealing; inversion layers; radiation effects; semiconductor device testing; above-threshold transconductance; durable anneal; irradiated MOSFET; irradiation; moderate inversion regions; n-MOSFET; operating gate bias range; short-term anneal; subthreshold regions; temperature response; transconductance degradation; Annealing; Anodes; Degradation; MOSFET circuits; Performance evaluation; Temperature distribution; Temperature measurement; Threshold voltage; Transconductance; X-ray scattering;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003372
