Title :
Ballistic performance limit and gate leakage modeling of Rectangular Gate-all-around InGaAs Nanowire Transistors with ALD Al2O3 as Gate Dielectric
Author :
Hossen, Md Obaidul ; Hossain, M. Shamim ; Khan, Saeed Uz Zaman ; Rahman, Fahim Ur ; Zaman, Rifat ; Khosru, Quazi D. M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
This paper presents the ballisitic current limit and gate leakage due to direct tunneling of a Rectangular Gate-all-around InGaAs Nanowire Transistor and their variation with fin width, oxide thickness and In compostion in InGaAs. Ballistic current is found to be higher (1.5×1011 Am-2) for about 20nm fin width, sub-5nm oxide thickness and In-rich InGaAs channel. On the other hand, gate leakage is prominent for sub-4nm oxide thickness, larger fin width and In-rich InGaAs.
Keywords :
III-V semiconductors; aluminium compounds; ballistic transport; field effect transistors; gallium arsenide; indium compounds; leakage currents; nanowires; semiconductor device models; tunnelling; ALD; Al2O3; InGaAs; ballistic current limit; ballistic performance limit; direct tunneling; gate dielectric; gate leakage modeling; rectangular gate-all-around nanowire transistors; Aluminum oxide; Gate leakage; Indium gallium arsenide; Logic gates; Performance evaluation; ALD; Ballistic; Direct Tunneling; Gate leakage;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482819
