DocumentCode
1618849
Title
Investigation of SOI SCR triggering and current sustaining under DC and TLP conditions
Author
Junjun Li ; Di Sarro, James ; You Li ; Gauthier, R.
Author_Institution
IBM Semicond. R&D Center, Essex Junction, VT, USA
fYear
2013
Firstpage
1
Lastpage
6
Abstract
We present DC and TLP data of four-terminal SCR devices and a diode-triggered SCR from an advanced SOI CMOS technology. Data analysis concludes that the triggering of an actively triggered SCR is related only to the current gain of each individual bipolar transistor, not the current gain product. Successful current sustaining of the SCR depends on the base resistance of its passively triggered bipolar transistor.
Keywords
CMOS integrated circuits; bipolar transistors; semiconductor diodes; silicon-on-insulator; thyristors; CMOS; DC; SOI; TLP; diode-triggered SCR; passively triggered bipolar transistor; silicon controlled rectifiers; silicon-on-insulator; Anodes; Cathodes; Current measurement; Electrostatic discharges; Junctions; Resistance; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
Conference_Location
Las Vegas, NV
ISSN
0739-5159
Type
conf
Filename
6635898
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