Title :
High CDM resistant low-cap SCR for 0.9V advanced CMOS technology
Author :
Yu-Ti Su ; Tzu-Heng Chang ; Tsung-Che Tsai ; Li-Wei Chu ; Jen-Chou Tseng ; Ming-Hsiang Song
Author_Institution :
TSMC, Hsinchu, Taiwan
Abstract :
A novel SCR is proposed using a scrambling structure with a Schottky junction. It has ultra low capacitance, high holding voltage and superb CDM performance compared to the prior arts. Additionally, a detailed and explicit analysis regarding the turn-on mechanism has been disclosed for the first time.
Keywords :
CMOS integrated circuits; electrostatic discharge; thyristors; CDM performance; CMOS technology; ESD; SCR; Schottky junction; charge device mode; scrambling structure; silicon controlled rectifier; turn-on mechanism; voltage 0.9 V; Capacitance; Electrostatic discharges; Junctions; Logic gates; Schottky diodes; Stress; Thyristors;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
Conference_Location :
Las Vegas, NV
