DocumentCode
1618878
Title
High CDM resistant low-cap SCR for 0.9V advanced CMOS technology
Author
Yu-Ti Su ; Tzu-Heng Chang ; Tsung-Che Tsai ; Li-Wei Chu ; Jen-Chou Tseng ; Ming-Hsiang Song
Author_Institution
TSMC, Hsinchu, Taiwan
fYear
2013
Firstpage
1
Lastpage
7
Abstract
A novel SCR is proposed using a scrambling structure with a Schottky junction. It has ultra low capacitance, high holding voltage and superb CDM performance compared to the prior arts. Additionally, a detailed and explicit analysis regarding the turn-on mechanism has been disclosed for the first time.
Keywords
CMOS integrated circuits; electrostatic discharge; thyristors; CDM performance; CMOS technology; ESD; SCR; Schottky junction; charge device mode; scrambling structure; silicon controlled rectifier; turn-on mechanism; voltage 0.9 V; Capacitance; Electrostatic discharges; Junctions; Logic gates; Schottky diodes; Stress; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
Conference_Location
Las Vegas, NV
ISSN
0739-5159
Type
conf
Filename
6635899
Link To Document