Title :
ESD performance of high mobility SiGe quantum well bulk finFET diodes and PMOS devices
Author :
Linten, D. ; Hellings, Geert ; Chen, Shih-Hung ; Zografos, Odysseas ; Scholz, Matthias ; Veloso, A. ; Groeseneken, Guido
Author_Institution :
Imec, Leuven, Belgium
Abstract :
Using a SiGe quantum well (QW) high mobility channel is an option for advanced PMOS Bulk finFET devices. This work presents the impact on the ESD robustness of gated nwell diodes and PMOS devices by moving from Si channels to SiGe QW channels, and by changing the device architecture from planar to bulk FinFET.
Keywords :
Ge-Si alloys; MOSFET; electrostatic discharge; semiconductor diodes; semiconductor quantum wells; ESD performance; ESD robustness; PMOS bulk finFET devices; PMOS devices; SiGe; device architecture; gated nwell diodes; high mobility silicon germanium quantum well bulk finFET diodes; quantum well high mobility channel; silicon channels; Anodes; Electrostatic discharges; FinFETs; Layout; Logic gates; Silicon; Silicon germanium;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
Conference_Location :
Las Vegas, NV
