Title :
Enhanced UV-visible rejection ratio in an MSM UV photodetector fabricated on N-face GaN by thermal annealing effects
Author :
Chang-Ju Lee ; Young-Jin Kwon ; Hyun-Gu Cha ; Sung-Ho Hahm
Author_Institution :
Grad. Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
We investigated a thermal annealing effect on N-face GaN with electrical and optical characteristics. We used Al Schottky electrodes for the formation of Al-N bonding. The dark current level increased after an annealing at low temperatures below 673 K while it decreased after annealing at 773 K. It was found that the AlN barrier was formed by thermal annealing at 773 K. In the spectral photo-responsivity characteristics, the maximum responsivity decreased and UV/visible rejection ratio was significantly improved with annealing at 773 K.
Keywords :
III-V semiconductors; Schottky barriers; aluminium; annealing; bonding processes; gallium compounds; photodetectors; ultraviolet detectors; wide band gap semiconductors; Al-GaN; MSM UV photodetector; N-face gallium nitride; Schottky electrodes; dark current level; electrical characteristics; enhanced UV-visible rejection ratio; optical characteristics; spectral photoresponsivity characteristics; temperature 773 K; thermal annealing effects; Annealing; Dark current; Detectors; Gallium nitride; Light emitting diodes; Metals; Substrates; GaN; N-face; Photodetector; Thermal Annealing; UV;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482830
