Reliability study of Zinc Oxide thin-film transistor with High-K gate dielectric

Author

Dedong Han ; Youfeng Geng ; Jian Cai ; Wei Wang ; Liangliang Wang ; Yu Tian ; Yi Wang ; Lifeng Liu ; Shengdong Zhang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2012

Firstpage

1

Lastpage

2

Abstract

ZnO-based thin-film transistors with High-K gate dielectric HfO₂ are fabricated on glass substrates by radio frequency (rf) magnetron sputtering. The electrical properties of ZnO-based TFTs were investigated by I_D-V_D and I_D-V_G measurements, and reliability of the ZnO TFTs was studied under constant voltage stress. The results indicate that ZnO thin-film transistors with High-K gate dielectric own good electrical properties and high reliability.

Keywords

II-VI semiconductors; hafnium compounds; high-k dielectric thin films; semiconductor device reliability; sputtering; thin film transistors; wide band gap semiconductors; zinc compounds; HfO₂; I-V measurements; RF magnetron sputtering; ZnO; constant voltage stress; electrical properties; glass substrates; high-k gate dielectric; radiofrequency magnetron sputtering; reliability study; zinc oxide thin-film transistor; Annealing; Logic gates; Reliability; Thin film transistors; Zinc oxide; Glass substrate; High-K; Reliability; ZnO-TFT;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482837

Filename

6482837