Title :
Reliability study of Zinc Oxide thin-film transistor with High-K gate dielectric
Author :
Dedong Han ; Youfeng Geng ; Jian Cai ; Wei Wang ; Liangliang Wang ; Yu Tian ; Yi Wang ; Lifeng Liu ; Shengdong Zhang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
ZnO-based thin-film transistors with High-K gate dielectric HfO2 are fabricated on glass substrates by radio frequency (rf) magnetron sputtering. The electrical properties of ZnO-based TFTs were investigated by ID-VD and ID-VG measurements, and reliability of the ZnO TFTs was studied under constant voltage stress. The results indicate that ZnO thin-film transistors with High-K gate dielectric own good electrical properties and high reliability.
Keywords :
II-VI semiconductors; hafnium compounds; high-k dielectric thin films; semiconductor device reliability; sputtering; thin film transistors; wide band gap semiconductors; zinc compounds; HfO2; I-V measurements; RF magnetron sputtering; ZnO; constant voltage stress; electrical properties; glass substrates; high-k gate dielectric; radiofrequency magnetron sputtering; reliability study; zinc oxide thin-film transistor; Annealing; Logic gates; Reliability; Thin film transistors; Zinc oxide; Glass substrate; High-K; Reliability; ZnO-TFT;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482837
