Title :
20GHz on-chip measurement of ESD waveform for system level analysis
Author :
Caignet, Fabrice ; Nolhier, Nicolas ; Wang, Aiping ; Mauran, Nicolas
Author_Institution :
LAAS, Toulouse, France
Abstract :
This paper deals with on-chip oscilloscope developed for in-situ measurement of real ESD event in 65nm CMOS technology. The measurement bandwidth of the embedded sampler is 100GHz, and 20GHz for the probes. Some measurement results during an ESD stress on an I/O structure are presented.
Keywords :
CMOS integrated circuits; electrostatic discharge; oscilloscopes; probes; semiconductor device measurement; stress effects; CMOS technology; ESD event; ESD stress; ESD waveform; I/O structure; frequency 100 GHz; frequency 20 GHz; measurement bandwidth; on-chip measurement; on-chip oscilloscope; probes; size 65 nm; system level analysis; Capacitance; Electrostatic discharges; Probes; Semiconductor device measurement; Stress; System-on-chip; Voltage measurement;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
Conference_Location :
Las Vegas, NV
