Development of a GaAs HBT integrated circuit chip performance simulator

Author

Goel, A.K.

Author_Institution

Dept. of Electr. Eng., Michigan Technol. Univ., Houghton, MI, USA

fYear

1992

Firstpage

635

Abstract

For an integrated circuit chip based on GaAs heterojunction bipolar transistor (HBT) technology, a computer simulator called GCHIPSIM has been developed for chip performance indicators including maximum clock frequency, power consumption, fabrication yield and size. GCHIPSIM is used to study the dependence of the indicators on technology feature size and chip integration level

Keywords

III-V semiconductors; bipolar integrated circuits; circuit analysis computing; digital simulation; gallium arsenide; heterojunction bipolar transistors; GCHIPSIM; GaAs; HBT integrated circuit chip; computer simulator; heterojunction bipolar transistor; monolithic IC; performance simulator; Bipolar integrated circuits; Circuit simulation; Clocks; Computational modeling; Computer simulation; Energy consumption; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on

Conference_Location

Washington, DC

Print_ISBN

0-7803-0510-8

Type

conf

DOI

10.1109/MWSCAS.1992.271242

Filename

271242

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1619415