Title :
Multilevel set/reset switching characteristics in Al/CeOx/Pt RRAM devices
Author :
Liu, L.F. ; Hou, Yunhe ; Yu, Daren ; Chen, Bing ; Gao, Bingzhao ; Tian, Yanjun ; Han, D.D. ; Wang, Yannan ; Kang, J.F. ; Zhang, Xiaobing
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Al/CeOx/Pt based resistive random access memory (RRAM) devices were fabricated and investigated. The CeOx RRAM devices show self-compliance set switching without a requirement of high voltage electric forming process. Multilevel set and reset switching processes were observed in the CeOx RRAM devices. Based on the unique distribution characteristic of oxygen vacancies in CeOx films, the possible mechanism of multilevel resistive switching (RS) in the CeOx RRAM Devices was discussed.
Keywords :
aluminium; cerium compounds; platinum; random-access storage; vacancies (crystal); Al-CeOx-Pt; RRAM devices; RS mechanism; multilevel resistive switching; multilevel set-reset switching characteristics; oxygen vacancies; resistive random access memory devices; self-compliance set switching; Electrodes; Electron devices; Films; Scanning electron microscopy; Silicon; Switches; Switching circuits; CeOx; RRAM; multilevel resistive switching;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482850
