Title :
HBM ESD protection for Class G power amplifiers
Author :
Srivastava, Anurag ; Worley, Gene ; Xiaohong Quan ; Guoqing Miao
Author_Institution :
Qualcomm Technol., Inc., San Diego, CA, USA
Abstract :
The standard ESD protection schemes are not very reliable for negative charge pump used in Class G Power Amplifiers. This work presents a novel ESD protection scheme using internal charge pump switches as ESD clamps. TLP measurements show that elevated level of ESD protection can be achieved with this scheme.
Keywords :
charge pump circuits; electrostatic discharge; power amplifiers; ESD clamps; HBM ESD protection; TLP measurements; class G power amplifiers; internal charge pump switches; negative charge pump; standard ESD protection; Charge pumps; Clamps; Discharges (electric); Electrostatic discharges; Standards; Transistors; Trigger circuits;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
Conference_Location :
Las Vegas, NV
