DocumentCode :
16196
Title :
Co-design of micro-fluidic heat sink and thermal through-silicon-vias for cooling of three-dimensional integrated circuit
Author :
Bing Shi ; Srivastava, Anurag ; Bar-Cohen, Avram
Author_Institution :
Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA
Volume :
7
Issue :
5
fYear :
2013
fDate :
Sept. 2013
Firstpage :
223
Lastpage :
231
Abstract :
Three-dimensional integrated circuits (3D-ICs) bring about new challenges to chip thermal management because of their high heat densities. Micro-channel-based liquid cooling and thermal through-silicon-vias (TSVs) have been adopted to alleviate the thermal issues in 3D-ICs. Thermal TSV enables higher interlayer thermal conductivity thereby achieving a more uniform thermal profile. Although somewhat effective in reducing temperatures, they are limited by the nature of the heat sink. On the other hand, micro-channel-based liquid cooling is significantly capable of addressing 3D-IC cooling needs, but consumes a lot of extra power for pumping coolant through channels. This study proposes a hybrid 3D-IC cooling scheme which combines micro-channel liquid cooling and thermal TSV with one acting as heat removal agent, whereas the other enabling beneficial heat conduction paths to the micro-channel structures. The experimental results show that the proposed hybrid cooling scheme provides much better cooling capability than using only thermal TSVs, although consuming 56% less cooling power compared with pure micro-channel cooling.
Keywords :
cooling; heat sinks; integrated circuit packaging; microfluidics; thermal conductivity; thermal management (packaging); three-dimensional integrated circuits; 3D integrated circuit; chip thermal management; heat conduction; heat removal agent; integrated circuit cooling; interlayer thermal conductivity; microchannel based liquid cooling; microfluidic heat sink codesign; thermal TSV; thermal profile; through-silicon-vias;
fLanguage :
English
Journal_Title :
Circuits, Devices & Systems, IET
Publisher :
iet
ISSN :
1751-858X
Type :
jour
DOI :
10.1049/iet-cds.2013.0026
Filename :
6604318
Link To Document :
بازگشت