A 1.1V 150GHz amplifier with 8dB gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines

Author

Seo, Munkyo ; Jagannathan, Basanth ; Carta, Corrado ; Pekarik, John ; Chen, Luis ; Yue, C. Patrick ; Rodwell, Mark

Author_Institution

Univ. of California, Santa Barbara, CA

fYear

2009

Firstpage

484

Lastpage

485

Abstract

This paper presents the first 150 GHz amplifier in a digital 65 nm CMOS technology. Design techniques to preserve raw transistor gain near f_max include layout optimization, dummy-prefilled microstrip lines (MSL) for design-rule compliance, and matching topologies which minimize passive element losses. To the authors´ knowledge, the measured 8.3 dB gain, 6.3 dBm saturated output power (P_sat), 1.5 dBm P_1dB, 25.5 mW DC dissipation (PDC), and 27 GHz 3 dB BW are among the best in either CMOS or SiGe beyond 110GHz.

Keywords

CMOS digital integrated circuits; field effect MIMIC; microstrip lines; millimetre wave power amplifiers; amplifier; bandwidth 27 GHz; dummy-prefilled microstrip lines; frequency 150 GHz; gain 8 dB; power 25 mW; size 65 nm; standard digital CMOS; voltage 1.1 V; CMOS technology; Design optimization; Gain measurement; Germanium silicon alloys; Microstrip; Power amplifiers; Power generation; Power measurement; Silicon germanium; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009. IEEE International

Conference_Location

San Francisco, CA

Print_ISBN

978-1-4244-3458-9

Type

conf

DOI

10.1109/ISSCC.2009.4977519

Filename

4977519