Title :
Comparative study of a-IGZO TFTs deposited by RF and DC sputtering
Author :
Wei Deng ; Xin He ; Xiang Xiao ; Shengdong Zhang
Author_Institution :
Key Lab. of TFT & Adv. Display, Peking Univ., Shenzhen, China
Abstract :
This paper studies on the IGZO TFTs fabricated by RF and DC sputtering comparatively. Results show the RF sputtered devices allow the lower off-current, higher on-current and steeper sub-threshold swing. These are attributed to the smoother surface topography in the RF sputtered film. It is also indicated that the passivation layer would degrade the device performances.
Keywords :
II-VI semiconductors; gallium compounds; indium compounds; passivation; sputter deposition; surface topography; thin film transistors; wide band gap semiconductors; zinc compounds; DC sputtering deposition; InGaZnO; RF sputtered devices; RF sputtered film; RF sputtering deposition; a-IGZO TFT; passivation layer; smoother surface topography; steeper subthreshold swing; Films; Logic gates; Passivation; Plasma temperature; Radio frequency; Sputtering; Thin film transistors; DC sputtering; IGZO TFT; RF sputtering;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482857
