DocumentCode
1619774
Title
Characterization of IGCT under zero-current-transition condition
Author
Motto, Kevin ; Zhang, Bin ; Huang, Alex Q.
Author_Institution
Dept. of Power/Control Syst., Northrop Grumman Corp., Sykesville, MD, USA
Volume
3
fYear
2001
Firstpage
1490
Abstract
This paper characterizes the integrated gate commutated thyristor (IGCT) device under the zero-current-transition (ZCT) soft switching condition for the first time. The test results show that ZCT soft switching can dramatically reduce the turn-off loss, turn-on loss of the IGCT switch and also alleviate the reverse recovery stress of the diode. The ZCT circuit is therefore suitable for increasing the current handling capabilities of IGCT devices.
Keywords
power semiconductor switches; semiconductor device measurement; semiconductor device testing; switching; thyristors; IGCT characterization; current handling capabilities; diode reverse recovery stress; integrated gate commutated thyristor; soft switching; turn-off loss; turn-on loss; zero-current-transition condition; Circuit testing; Fault currents; Inverters; RLC circuits; Resonance; Stress; Switches; Switching circuits; Thyristors; Zero voltage switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE
Conference_Location
Chicago, IL, USA
ISSN
0197-2618
Print_ISBN
0-7803-7114-3
Type
conf
DOI
10.1109/IAS.2001.955732
Filename
955732
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