Title :
Contacts charge transport and additional noise properties of semiconductor CdTe sensors
Author :
Sik, O. ; Grmela, L. ; Sikula, Jessica
Author_Institution :
Dept. of Phys., Brno Univ. of Technol., Brno, Czech Republic
Abstract :
Contact quality analysis of Cadmium-Telluride detector has been conducted. IV characteristics at operating temperatures T = 305 K, 315 K, 325 K were measured. Results showed asymmetry of IV characteristics for negative and positive bias indicated by increased leakage current in case of negative biasing. Noise contributions of contacts were evaluated. Reverse biased contact in negative was found as dominant source of low frequency noise.
Keywords :
II-VI semiconductors; cadmium compounds; leakage currents; noise; semiconductor counters; CdTe; IV characteristics; cadmium-telluride detector; contact charge transport; contact quality analysis; leakage current; low frequency noise; negative bias; noise properties; positive bias; reverse biased contact; semiconductor sensors; temperature 305 K; temperature 315 K; temperature 325 K; Contacts; Current measurement; Detectors; Metals; Noise; Temperature; Temperature measurement; CdTe; noise; quality analysis; spectrometer;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482863
