Title :
Electrical properties of CuPc-based OTFTs with atomic layer deposited HfAlO gate dielectric
Author :
Tang, W.M. ; Aboudi, Uraib ; Provine, J. ; Howe, R.T. ; Wong, H.-S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
CuPc-based organic thin-film transistor (OTFT) with high-k dielectric HfAlO as gate dielectric prepared by atomic layer deposition has been fabricated. Experimental results show that the HfAlO-OTFT has higher mobility, smaller sub-threshold slope and larger on/off ratio than the HfO2 sample. All these should be attributed to the addition of Al into the HfO2 film confirmed by X-ray photoelectron spectroscopy, resulting in improved dielectric and interfacial properties. Moreover, the reliability of the device upon exposure to air is investigated.
Keywords :
X-ray spectroscopy; aluminium compounds; atomic layer deposition; dielectric properties; hafnium compounds; high-k dielectric thin films; photoelectron spectroscopy; semiconductor device reliability; thin film transistors; CuPc-based OTFT; CuPc-based organic thin-film transistor; X-ray photoelectron spectroscopy; atomic layer deposited gate dielectric; dielectric properties; electrical properties; high-k dielectric; higher mobility; interfacial properties; larger on-off ratio; reliablity; smaller subthreshold slope; Propulsion; CuPc; High-k dielectric HfAlO; OTFT;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482866
