Title :
A quasi 2-dimensional model for thyristor based devices
Author :
Detjen, Dirk ; Schröder, Stefan ; Von Bloh, Jochen ; De Doncker, Rik W.
Author_Institution :
Inst. for Power Electron. & Electr. Drives, Tech. Hochschule Aachen, Germany
Abstract :
A model for GTO devices as well as new thyristor based devices, such as IGCT or MTO, suited for circuit simulation is proposed. The model is based on the charge control method and considers significant 2-dimensional geometric effects inside the GTO-cell during switching operation. The GTO-cell is divided into two parallel branches in a restricted region near the gate layer. One branch represents a current path nearby the gate contact, the other simulates a current path which is at a greater distance. In this way, the current displacement during switching can be simulated within a moderate calculation time. Simulation results obtained with the new model are compared to finite element simulation results showing encouraging results. Finally, a test circuit was used to validate the proposed model with the help of experimental results.
Keywords :
circuit simulation; electrical contacts; power semiconductor switches; semiconductor device models; switching; thyristors; 2-dimensional geometric effects; GTO devices; IGCT; MTO; calculation time; charge control method; circuit simulation; current displacement; current path; gate contact; gate layer; quasi 2-dimensional model; switching operation; test circuit; thyristor based devices; Anodes; Circuit simulation; Circuit testing; Equations; Finite element methods; Power electronics; Power semiconductor devices; Software packages; Solid modeling; Thyristors;
Conference_Titel :
Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE
Conference_Location :
Chicago, IL, USA
Print_ISBN :
0-7803-7114-3
DOI :
10.1109/IAS.2001.955735
