A quasi 2-dimensional model for thyristor based devices

A model for GTO devices as well as new thyristor based devices, such as IGCT or MTO, suited for circuit simulation is proposed. The model is based on the charge control method and considers significant 2-dimensional geometric effects inside the GTO-cell during switching operation. The GTO-cell is divided into two parallel branches in a restricted region near the gate layer. One branch represents a current path nearby the gate contact, the other simulates a current path which is at a greater distance. In this way, the current displacement during switching can be simulated within a moderate calculation time. Simulation results obtained with the new model are compared to finite element simulation results showing encouraging results. Finally, a test circuit was used to validate the proposed model with the help of experimental results.