Title :
Sol-gel barium titanate-based RRAM by inserting graphene oxide interlayer
Author :
Yu-Chi Chang ; Chia-Yu Wei ; Yeong-Her Wang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The barium titanate-based (BTO-based) resistive random-access memory (RRAM) was successfully fabricated by sol-gel process. The ITO/BTO/Al structure showed stable switching behaviors due to it can offer smooth surface by sol-gel methods. Moreover, based on this structure inserted with graphene oxide (GO) interlayers, the device exhibited good stability and enhancement of the on/off current ratio about two orders, which can be attributed to absorption/release of oxygen related functional groups of GO.
Keywords :
barium compounds; graphene; random-access storage; ITO/BTO/Al structure; graphene oxide interlayer; resistive random-access memory; sol-gel barium titanate-based RRAM; Barium; Graphene; Indium tin oxide; Nonvolatile memory; Resistance; Switches; Titanium compounds; BTO; RRAM; Sol-gel; graphene;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482870
