Title :
Nanoelectronics and Diversification in the 3D technologies era
Author :
Deleonibus, Simon
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
Nanoelectronics will have to face major challenges in the next decades in order to proceed with increasing progress and reduced variability. New progress laws combined to the scaling down of CMOS based technology will emerge to enable new paths to Functional Diversification. New materials and disruptive architectures, Heterogeneous Integration, introducing 3D schemes at the Front End and Back End levels, will be introduced to make it possible.
Keywords :
CMOS integrated circuits; nanoelectronics; 3D schemes; 3D technology; CMOS based technology; back end level; disruptive architectures; diversification; front end level; functional diversification; heterogeneous integration; nanoelectronics; variability reduction; Abstracts; Logic gates; MOS devices; Random access memory; 3D; FDSOI; FinFET; Nanoelectronics; diversifications; embedded memories;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482878
