Growth of epitaxial quality SnS thin films on graphene

Author

Wang, W. ; Leung, Kin K. ; Fong, W.K. ; Wang, S.F. ; Hui, Y.Y. ; Lau, S.P. ; Surya, Charles

Author_Institution

Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., Hong Kong, China

fYear

2012

Firstpage

1

Lastpage

3

Abstract

SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on layered substrates such as graphene and mica. Photo-absorption measurements indicate an indirect bandgap of ~1 eV and a direct bandgap of ~1.25 eV. The technique leads to significant improvement in the crystallinity of the films compared to the samples deposited on convention crystalline semiconductors or soda lime glass. The absorption coefficient, α, is of the order of 10⁴ cm^-1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility of ~81 cm²V^-1s^-1 was observed for SnS films on graphene/GaAs(100) substrates.

Keywords

absorption coefficients; energy gap; hole mobility; molecular beam epitaxial growth; photoexcitation; semiconductor epitaxial layers; semiconductor growth; tin compounds; van der Waals forces; C-GaAs; MBE; SnS; absorption coefficient; band gap states; convention crystalline semiconductors; crystallinity; epitaxial growth quality; graphene-GaAs(100) substrates; hole mobility; indirect band gap; layered substrates; mica; molecular beam epitaxy; photoabsorption measurements; soda lime glass; thin films; van der Waals epitaxy; Buffer layers; Gallium arsenide; Graphene; Molecular beam epitaxial growth; Substrates; SnS; molecular beam epitaxy; photovoltaics; van der Waals Epitaxy;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482879

Filename

6482879