Title :
Numerical study on dual material gate nanowire tunnel field-effect transistor
Author :
Aixi Zhang ; Jinhe Mei ; Lining Zhang ; Hongyu He ; Jin He ; Mansun Chan
Author_Institution :
SOC Key Lab., Peking Univ. Shenzhen, Shenzhen, China
Abstract :
A numerical study on the characteristics of dual-material gate nanowire tunnel field-effect transistor (DMG-NTFET) is presented using 3-D TCAD simulations in this paper. Compared with the single-material gate tunnel field-effect transistor (SMG-NTFET), the numerical simulation results demonstrate that the DMG-NTFET has lower leakage current IOFF with a negligible loss of ION. Moreover, the impact of two gates´ work function difference on the DMG-NTFET ON/OFF current ratio, transconductance (Gm) and DIBL effects is studied, and the effect of control gate length on the ION and IOFF is demonstrated. Finally, the optimization design of the work function difference and the control gate length for the DMG-NTFET is discussed.
Keywords :
field effect transistors; leakage currents; losses; nanowires; numerical analysis; optimisation; semiconductor device models; technology CAD (electronics); tunnelling; 3D TCAD simulation; DIBL effect; DMG-NTFET; ON-OFF current ratio; SMG-NTFET; control gate length effect; dual material gate nanowire tunnel field-effect transistor; gate work function difference; leakage current; numerical simulation; optimization design; single-material gate tunnel field-effect transistor; transconductance; Electric fields; Logic gates; Materials; Transconductance; Transistors; Tunneling; band-to-band tunneling; dual-material gate (DMG); nanowire; numerical simulation; single-material gate (SMG); tunnel field-effect transistor (TFET);
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482880
