Numerical study on dual material gate nanowire tunnel field-effect transistor

Author

Aixi Zhang ; Jinhe Mei ; Lining Zhang ; Hongyu He ; Jin He ; Mansun Chan

Author_Institution

SOC Key Lab., Peking Univ. Shenzhen, Shenzhen, China

fYear

2012

Firstpage

1

Lastpage

5

Abstract

A numerical study on the characteristics of dual-material gate nanowire tunnel field-effect transistor (DMG-NTFET) is presented using 3-D TCAD simulations in this paper. Compared with the single-material gate tunnel field-effect transistor (SMG-NTFET), the numerical simulation results demonstrate that the DMG-NTFET has lower leakage current I_OFF with a negligible loss of I_ON. Moreover, the impact of two gates´ work function difference on the DMG-NTFET ON/OFF current ratio, transconductance (G_m) and DIBL effects is studied, and the effect of control gate length on the I_ON and I_OFF is demonstrated. Finally, the optimization design of the work function difference and the control gate length for the DMG-NTFET is discussed.

Keywords

field effect transistors; leakage currents; losses; nanowires; numerical analysis; optimisation; semiconductor device models; technology CAD (electronics); tunnelling; 3D TCAD simulation; DIBL effect; DMG-NTFET; ON-OFF current ratio; SMG-NTFET; control gate length effect; dual material gate nanowire tunnel field-effect transistor; gate work function difference; leakage current; numerical simulation; optimization design; single-material gate tunnel field-effect transistor; transconductance; Electric fields; Logic gates; Materials; Transconductance; Transistors; Tunneling; band-to-band tunneling; dual-material gate (DMG); nanowire; numerical simulation; single-material gate (SMG); tunnel field-effect transistor (TFET);

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482880

Filename

6482880