Title :
Using static voltage analysis and voltage-aware DRC to identify EOS and oxide breakdown reliability issues
Author :
Hogan, Matthew ; SRINIVASAN, SUDARSHAN ; Medhat, Dina ; Ziyang Lu ; Hofmann, Martin
Author_Institution :
Mentor Graphics, Wilsonville, OR, USA
Abstract :
Critical DRC spacing rules for high-voltage signals and the use of thin oxides for low-power applications leave ICs vulnerable to electrical overstress and other reliability issues, which may lead to oxide breakdown. New verification techniques provide diagnostic insight into reliability issues due to oxide breakdown, and identify opportunities for design improvements.
Keywords :
electrostatic discharge; integrated circuit design; integrated circuit reliability; EOS; critical DRC spacing; electrical overstress; high-voltage signal; low-power application; oxide breakdown reliability; static voltage analysis; thin oxides; verification technique; voltage-aware DRC; Earth Observing System; Electric breakdown; Layout; Logic gates; Rails; Reliability engineering;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
Conference_Location :
Las Vegas, NV
