Title :
Performance of a MOHOS-type memory using np-HfO2 and variable tunneling oxide thickness
Author :
Molina, Juan ; Calleja, Wilfrido ; Rosales, Pedro ; Zuniga, Carlos ; Hidalga, F.J. ; TORRES, ABEL
Author_Institution :
Electron. Dept., Nat. Inst. of Astrophys., Opt. & Electron. (INAOE), Puebla, Mexico
Abstract :
We use HfO2 nanoparticles (np-HfO2 embedded in a spin-on glass SOG oxide matrix) as a charge trapping layer CTL in metal/oxide/high-k/oxide/silicon (MOHOS)-memories. This CTL is then deposited on ultra-thin layers of chemical oxide SiOx ≤2nm. Depending on the SiOx thickness, a trade-off in writing/erasing and data retention time characteristics is obtained.
Keywords :
hafnium compounds; high-k dielectric thin films; nanoelectronics; nanoparticles; storage management chips; tunnelling; CTL; HfO2; MOHOS-type memory; charge trapping layer; chemical oxide; data retention time characteristics; metal-oxide-high-k-oxide-silicon-memories; nanoparticle; spin-on glass SOG oxide matrix; ultrathin layers; variable tunneling oxide thickness; Charge carrier processes; Chemicals; Hafnium compounds; Programming; Substrates; Tunneling; Writing; HfO2 nanoparticles; MOHOS memory; charge trapping layer; data retention times; programming; tunneling oxide;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482883
