Performance of a MOHOS-type memory using np-HfO2 and variable tunneling oxide thickness

Author

Molina, Juan ; Calleja, Wilfrido ; Rosales, Pedro ; Zuniga, Carlos ; Hidalga, F.J. ; TORRES, ABEL

Author_Institution

Electron. Dept., Nat. Inst. of Astrophys., Opt. & Electron. (INAOE), Puebla, Mexico

fYear

2012

Firstpage

1

Lastpage

2

Abstract

We use HfO₂ nanoparticles (np-HfO₂ embedded in a spin-on glass SOG oxide matrix) as a charge trapping layer CTL in metal/oxide/high-k/oxide/silicon (MOHOS)-memories. This CTL is then deposited on ultra-thin layers of chemical oxide SiOx ≤2nm. Depending on the SiOx thickness, a trade-off in writing/erasing and data retention time characteristics is obtained.

Keywords

hafnium compounds; high-k dielectric thin films; nanoelectronics; nanoparticles; storage management chips; tunnelling; CTL; HfO₂; MOHOS-type memory; charge trapping layer; chemical oxide; data retention time characteristics; metal-oxide-high-k-oxide-silicon-memories; nanoparticle; spin-on glass SOG oxide matrix; ultrathin layers; variable tunneling oxide thickness; Charge carrier processes; Chemicals; Hafnium compounds; Programming; Substrates; Tunneling; Writing; HfO2 nanoparticles; MOHOS memory; charge trapping layer; data retention times; programming; tunneling oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482883

Filename

6482883