Title :
A 1.3-ns 32-word by 32-bit three-port BiCMOS register file
Author :
Chao, Chin-Chieh ; Wooley, Bruce A.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
This paper describes a CMOS multiport static memory cell that can be accessed through a low-voltage-swing read path. With this cell it is possible to achieve read access times comparable to those of pure bipolar memories while preserving the high density of CMOS memories. An experimental 32-word by 32-bit three-port register file has been designed and implemented using the cell. This circuit was fabricated in a 0.6-μm BiCMOS technology and achieves a pin-to-pin access time of 1.3 ns at 20°C
Keywords :
multiport networks; 0.6 micron; 1.3 ns; 20 degC; 32 bit; VLSI; low-voltage-swing read path; memory density; multiport static memory cell; pin-to-pin access time; read access times; three-port BiCMOS register file; BiCMOS integrated circuits; CMOS memory circuits; CMOS technology; Chaos; Integrated circuit technology; Multichip modules; Packaging; Power dissipation; Registers; Throughput;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587868
