A novel thermal-shutdown protection circuit

Author

Bin, Zhang ; Quan-Yuan, Feng

Author_Institution

Inst. of Microelectron., Southwest Jiaotong Univ., Chengdu, China

fYear

2009

Firstpage

535

Lastpage

538

Abstract

A new type thermal-shutdown circuit has been designed in UMC 0.6 um BiCMOS process. A feedback is used to solve the problem of thermal-oscillation and a shunt regulator circuit is used to solve the problem of the limit of the technology model. This thermal-shutdown circuit has simple structure, process insensitive and low power dissipation. It can be widely used for modularize in power management ICs. HSPICE simulation results shows that the circuit has excellent capability of power supply rejection and operated in power range from 2 V to 12 V. The error between Activation temperature and deactivation temperature remained basically unchanged for 29degC.

Keywords

BiCMOS integrated circuits; power supply circuits; BiCMOS process; HSPICE; deactivation temperature; shunt regulator circuit; size 0.6 micron; thermal-oscillation; thermal-shutdown protection circuit; voltage 2 V to 12 V; BiCMOS integrated circuits; Electronic circuits; Energy management; Feedback circuits; Microelectronics; Power dissipation; Protection; Regulators; Temperature sensors; Voltage; BiCMOS; Feedback; Modularize; Themral-shutdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Anti-counterfeiting, Security, and Identification in Communication, 2009. ASID 2009. 3rd International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3883-9

Electronic_ISBN

978-1-4244-3884-6

Type

conf

DOI

10.1109/ICASID.2009.5276996

Filename

5276996