Title :
An ECL gate with improved speed and low power in BiCMOS process
Author :
Oklobdzija, Vojin G.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Abstract :
An ECL gate exhibiting an improved speed-power product over the circuits presented in the past is described. The improvement is due to a combination of a push-pull output stage driven by a controlled current source. This circuit has better driving capabilities and improved speed, yet it uses an order of magnitude less power than regular ECL gate. Fully bipolar realization of this circuit is also possible
Keywords :
emitter-coupled logic; BiCMOS process; ECL gate; controlled current source; driving capabilities; power consumption; push-pull output stage; speed-power product; BiCMOS integrated circuits; Energy consumption; Feedback circuits; Frequency; Laboratories; Logic; Power engineering and energy; Power engineering computing; Systems engineering and theory; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587872
