Title :
Grain boundary-related kink effects of poly-Si TFTs
Author :
Liu, Tony Chi ; Kuo, J.B.
Author_Institution :
Sch. of Inf. Eng., Peking Univ., Shenzhen, China
Abstract :
This paper presents the behavior of grain boundary-related kink effect in poly-si TFTs. As verified by the experimental data and simulation results using the discrete grain/discrete energy level distributed trap approach, the barrier height of the grain boundaries increases with the trap density, the inverse of the grain size and the distance from the drain, which determines the current of the parasitic bipolar transistor and thus the kink effect.
Keywords :
bipolar transistors; elemental semiconductors; grain boundaries; grain size; silicon; thin film transistors; Si; barrier height; discrete grain-discrete energy level distributed trap approach; grain boundary-related kink effects; grain size; parasitic bipolar transistor; poly-silicon TFT; trap density; Bipolar transistors; Electric potential; Electron traps; Electrostatics; Grain boundaries; Grain size; Thin film transistors; Poly-Si TFTs; grain boundary; kink effect; potential barrier;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482891
