High-gain bandwidth product Si/InGaAs avalanche photodetectors

Author

Weishu Wu ; Hawkins, A.R. ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA

fYear

1997

Firstpage

35

Lastpage

36

Abstract

High gain, large bandwidth, and low noise avalanche photodetectors (APDs) are increasingly attractive for use in high-bit-rate optical communication systems because of the internal gain provided by APDs. Silicon avalanche photodetectors are well-known for their large gain bandwidth product, low excess noise figure, and good temperature sensitivity. Using wafer fusion, we have demonstrated an 81-GHz gain bandwidth product Si/InGaAs APD, which can be used in the 1.3-1.6 μm wavelength regime. Here, we analyze the performance of Si/InGaAs APDs and present the optimized design for these APDs

Keywords

III-V semiconductors; avalanche photodiodes; elemental semiconductors; gallium arsenide; indium compounds; photodetectors; silicon; 1.3 to 1.6 micron; Si-InGaAs; Si/InGaAs avalanche photodetector; excess noise figure; gain bandwidth product; optical communication system; temperature sensitivity; wafer fusion; Bandwidth; Design optimization; Indium gallium arsenide; Noise figure; Optical fiber communication; Optical noise; Performance analysis; Photodetectors; Silicon; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication. OFC 97., Conference on

Conference_Location

Dallas, TX

Print_ISBN

1-55752-480-7

Type

conf

DOI

10.1109/OFC.1997.719667

Filename

719667