Subnanoamperes dark current and high-efficiency waveguide photodiodes with 32-GHz bandwidth buried with Fe-doped indium phosphide

Author

Aoyagi, T. ; Ishimura, E. ; Funaba, S. ; Suzuhi, D. ; Kimura, T. ; Sogo, T. ; Aiga, M.

Author_Institution

Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1997

Firstpage

37

Lastpage

38

Abstract

Waveguide photodiodes are suitable for integration with edge-emitting laser diodes, waveguide amplifiers, or planar lightwave circuits (PLC). As for waveguide photodiodes, wide bandwidth and high external quantum efficiency were already reported. However, it has scarcely been reported that the devices have <1 nA dark current, because almost of them are buried with polyimide. Highly sensitive optical fiber communication systems require lower dark current. In this paper, we report waveguide photodiodes that have extremely low dark current by adopting Fe-doped indium phosphide (InP) current blocking layer without deterioration of bandwidth and external quantum efficiency

Keywords

III-V semiconductors; buried layers; indium compounds; iron; optical waveguide components; photodiodes; 32 GHz; InP:Fe; bandwidth; buried Fe-doped indium phosphide current blocking layer; dark current; external quantum efficiency; optical fiber communication system; waveguide photodiode; Bandwidth; Circuits; Dark current; Diode lasers; Indium phosphide; Optical amplifiers; Optical planar waveguides; Optical waveguides; Photodiodes; Planar waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication. OFC 97., Conference on

Conference_Location

Dallas, TX

Print_ISBN

1-55752-480-7

Type

conf

DOI

10.1109/OFC.1997.719669

Filename

719669