Title :
Subnanoamperes dark current and high-efficiency waveguide photodiodes with 32-GHz bandwidth buried with Fe-doped indium phosphide
Author :
Aoyagi, T. ; Ishimura, E. ; Funaba, S. ; Suzuhi, D. ; Kimura, T. ; Sogo, T. ; Aiga, M.
Author_Institution :
Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Waveguide photodiodes are suitable for integration with edge-emitting laser diodes, waveguide amplifiers, or planar lightwave circuits (PLC). As for waveguide photodiodes, wide bandwidth and high external quantum efficiency were already reported. However, it has scarcely been reported that the devices have <1 nA dark current, because almost of them are buried with polyimide. Highly sensitive optical fiber communication systems require lower dark current. In this paper, we report waveguide photodiodes that have extremely low dark current by adopting Fe-doped indium phosphide (InP) current blocking layer without deterioration of bandwidth and external quantum efficiency
Keywords :
III-V semiconductors; buried layers; indium compounds; iron; optical waveguide components; photodiodes; 32 GHz; InP:Fe; bandwidth; buried Fe-doped indium phosphide current blocking layer; dark current; external quantum efficiency; optical fiber communication system; waveguide photodiode; Bandwidth; Circuits; Dark current; Diode lasers; Indium phosphide; Optical amplifiers; Optical planar waveguides; Optical waveguides; Photodiodes; Planar waveguides;
Conference_Titel :
Optical Fiber Communication. OFC 97., Conference on
Conference_Location :
Dallas, TX
Print_ISBN :
1-55752-480-7
DOI :
10.1109/OFC.1997.719669
