DocumentCode
1620478
Title
Thermally induced current constriction in III-V heterojunction bipolar transistors
Author
Koenig, Eric ; Schneider, Jürgen ; Seiler, Ulrich ; Erben, Uwe
Author_Institution
Res. Center, Daimler-Benz AG, Ulm, Germany
fYear
1994
Firstpage
127
Lastpage
130
Abstract
The current through HBTs with different emitter lengths is shown to be constricted to practically identical areas as a result of the lateral temperature distribution and negative temperature coefficient of the base-emitter voltage
Keywords
temperature distribution; III-V HBT; base-emitter voltage; emitter lengths; heterojunction bipolar transistors; lateral temperature distribution; negative temperature coefficient; thermally induced current constriction; Circuits; Current distribution; Fingers; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Temperature dependence; Temperature distribution; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-1316-X
Type
conf
DOI
10.1109/BIPOL.1994.587878
Filename
587878
Link To Document