The design of sub-threshold reference circuit using resistor temperature compensation

Author

Cai, Xiaowei ; Luo, Li ; Li, Zheying

Author_Institution

Sch. of Electron. & Eng., Beijing Jiao Tong Univ., Beijing, China

fYear

2009

Firstpage

548

Lastpage

551

Abstract

A reference circuit employing sub-threshold current is presented, which uses two CTAT currents and resistor temperature compensation to generate a reference voltage of 200 mV. Since most of MOSFETs are working at sub-threshold region, the circuit only consumes 716 nW at supply voltage of 1 V with PSRR of -53.5dB at room temperature using TSMC 0.18 mum technology. The reference voltage´s average temperature coefficient is 25 ppm/deg in the range [-25, +125]deg and its variation is 2.26 mV/V for supply voltage from 0.8 to 2.5 V.

Keywords

MOSFET; network synthesis; resistors; MOSFET; resistor temperature compensation; size 0.18 mum; subthreshold current; subthreshold reference circuit; temperature 293 K to 298 K; voltage 200 mV to 2.5 V; Character generation; Design engineering; Energy consumption; Intrusion detection; MOSFET circuits; Power generation; Resistors; Silicon; Temperature distribution; Threshold voltage; low power consumption; sub-threshold; temperature coefficient; voltage reference;

fLanguage

English

Publisher

ieee

Conference_Titel

Anti-counterfeiting, Security, and Identification in Communication, 2009. ASID 2009. 3rd International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3883-9

Electronic_ISBN

978-1-4244-3884-6

Type

conf

DOI

10.1109/ICASID.2009.5277005

Filename

5277005