Title :
Measurements and simulations of breakdown phenomena in a voltage-scalable smart power complementary BiCMOS process
Author :
Ryter, R. ; Zingg, R. ; Fichtner, W.
Author_Institution :
Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
Good agreement between 2-D simulations and experiments of device parameters, especially breakdown voltages, allows voltage scaling against cutoff frequency. Measurements and simulations of breakdown phenomena in vertical NPN transistors fabricated with a voltage-scalable smart power complementary BiCMOS process show that the open base and the open emitter breakdown occur at different spatial positions in the device structure
Keywords :
power integrated circuits; 2D simulations; breakdown phenomena; complementary BiCMOS process; cutoff frequency; device parameters; open base breakdown; open emitter breakdown; smart power; spatial positions; vertical NPN transistors; voltage scaling; BiCMOS integrated circuits; Bipolar transistors; Breakdown voltage; Cutoff frequency; Diodes; Doping; Electric breakdown; Histograms; Laboratories; Power measurement;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587879
