High-speed and high-saturation power semiconductor waveguide photodetector structures

Author

Welstand, R.B. ; Jiang, H. ; Zhu, J.T. ; Liu, Y.Z. ; Pappert, S.A. ; Yu, P.K.L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

fYear

1997

Firstpage

39

Lastpage

40

Abstract

In the present work, two new approaches are investigated to simultaneously improve the saturation power and linearity: a) using a three layer waveguide structure with an InGaAsP (λ_g = 1.24 μm) active layer, that operates through the Franz-Keldysh effect (FKE), and b) using a four-layer large optical cavity (LOG) asymmetric waveguide with InGaAs absorber and a passive InGaAsP layer

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical communication equipment; optical resonators; optical saturation; optical waveguides; photodetectors; 1.24 mum; Franz-Keldysh effect; InGaAs; InGaAs absorber; InGaAsP; active layer; four-layer large optical cavity asymmetric waveguide; high-speed high-saturation power semiconductor waveguide photodetector structures; linearity; passive InGaAsP layer; saturation power; three layer waveguide structure; Detectors; High speed optical techniques; Optical receivers; Optical saturation; Optical sensors; Optical waveguides; Photoconductivity; Photodetectors; Photodiodes; Semiconductor waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication. OFC 97., Conference on

Conference_Location

Dallas, TX

Print_ISBN

1-55752-480-7

Type

conf

DOI

10.1109/OFC.1997.719671

Filename

719671