Title :
High-speed and high-saturation power semiconductor waveguide photodetector structures
Author :
Welstand, R.B. ; Jiang, H. ; Zhu, J.T. ; Liu, Y.Z. ; Pappert, S.A. ; Yu, P.K.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
In the present work, two new approaches are investigated to simultaneously improve the saturation power and linearity: a) using a three layer waveguide structure with an InGaAsP (λg = 1.24 μm) active layer, that operates through the Franz-Keldysh effect (FKE), and b) using a four-layer large optical cavity (LOG) asymmetric waveguide with InGaAs absorber and a passive InGaAsP layer
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical communication equipment; optical resonators; optical saturation; optical waveguides; photodetectors; 1.24 mum; Franz-Keldysh effect; InGaAs; InGaAs absorber; InGaAsP; active layer; four-layer large optical cavity asymmetric waveguide; high-speed high-saturation power semiconductor waveguide photodetector structures; linearity; passive InGaAsP layer; saturation power; three layer waveguide structure; Detectors; High speed optical techniques; Optical receivers; Optical saturation; Optical sensors; Optical waveguides; Photoconductivity; Photodetectors; Photodiodes; Semiconductor waveguides;
Conference_Titel :
Optical Fiber Communication. OFC 97., Conference on
Conference_Location :
Dallas, TX
Print_ISBN :
1-55752-480-7
DOI :
10.1109/OFC.1997.719671
