Title :
Measurements of InGaAs metal-semiconductor-metal photodetector nonlinearities
Author :
Williams, Keith J. ; Esman, Ronald D. ; Williamson, Steven ; Valdmanis, Janis
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
The use of 200-mW low-noise lasers in externally modulated fiber-optic links can increase the link dynamic range and reduce the noise figure by 10 dB per current decade above 1 mA. To realize this, these systems require high-speed MSM photodetectors (PDs) capable of detecting up to 50 mA. Here we present experimental nonlinearity (NL) results showing that these devices behave similarly to p-i-n devices when illuminated with high powers. The PD under study has an undoped InGaAs active-layer thickness of 0.5 μm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; nonlinear optics; optical communication equipment; photodetectors; 0.5 mum; 1 mA; 200 mW; 50 mA; InGaAs; InGaAs metal-semiconductor-metal photodetector nonlinearities; current decade; experimental nonlinearity; externally modulated fiber-optic links; high powers; high-speed MSM photodetectors; link dynamic range; mW low-noise lasers; noise figure; p-i-n devices; undoped InGaAs active-layer thickness; Bandwidth; Fiber lasers; Fiber nonlinear optics; High speed optical techniques; Indium gallium arsenide; Nonlinear optics; Photoconductivity; Photodetectors; Surface resistance; Voltage;
Conference_Titel :
Optical Fiber Communication. OFC 97., Conference on
Conference_Location :
Dallas, TX
Print_ISBN :
1-55752-480-7
DOI :
10.1109/OFC.1997.719673
