Theory and modeling of readily integratable microwave metal-semiconductor-metal photodetectors

Author

Babu, S. K Suresh ; Gomes, N.J. ; Callaghan, P. ; Jastrzebski, A.K.

Author_Institution

Electron. Eng. Labs., Kent Univ., Canterbury, UK

fYear

1997

Firstpage

42

Lastpage

43

Abstract

Operation in the 800-nm window has become of increased interest for LAN and subscriber loop applications. High component count in such systems makes microwave monolithic integrated circuits (MMICs) very attractive in seeking even lower cost solutions. In this paper, two metal-semiconductor-metal (MSM) photodetectors fabricated using no modifications to standard MMIC foundry processes are examined. The devices, each with seven interdigitated electrode fingers, were fabricated on GaAs-GaAlAs pHEMT and GaAs MESFET (M-MSM) processes

Keywords

HEMT integrated circuits; MESFET integrated circuits; MMIC; infrared detectors; integrated circuit technology; integrated optoelectronics; metal-semiconductor-metal structures; optical communication equipment; photodetectors; 800 nm; GaAs MESFET; GaAs-GaAlAs; GaAs-GaAlAs pHEMT a; LAN; MMICs; MSM photodetectors; even lower cost solutions; high component count; interdigitated electrode fingers; metal-semiconductor-metal photodetectors; microwave monolithic integrated circuits; readily integratable microwave metal-semiconductor-metal photodetectors; standard MMIC foundry processes; subscriber loop applications; Costs; Electrodes; Foundries; Local area networks; MMICs; Microwave devices; Microwave theory and techniques; Monolithic integrated circuits; Photodetectors; Subscriber loops;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication. OFC 97., Conference on

Conference_Location

Dallas, TX

Print_ISBN

1-55752-480-7

Type

conf

DOI

10.1109/OFC.1997.719674

Filename

719674