Title :
Accuracy of series resistances extraction schemes for polysilicon bipolar transistors
Author :
Dubois, Emmanuel ; Bricout, Paul Henri ; Robilliart, Etienne
Author_Institution :
IEMN/ISEN, CNRS, Lille, France
Abstract :
In this work, two experimental methods used for the determination of the emitter and base series resistances are critically reviewed and compared to an accurate solution based on device simulations. In addition, the sensitivity of the series resistances on the potential barriers present at the emitter polysilicon/monocrystal interface is investigated
Keywords :
electric resistance; base series resistance; device simulation; emitter polysilicon/monocrystal interface; emitter series resistance; polysilicon bipolar transistors; potential barriers; series resistances extraction schemes; Bipolar transistors; Circuits; Contact resistance; Current measurement; Electrical resistance measurement; Electron emission; Frequency; MONOS devices; Silicon; Tunneling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587883
