DocumentCode
1620601
Title
Accuracy of series resistances extraction schemes for polysilicon bipolar transistors
Author
Dubois, Emmanuel ; Bricout, Paul Henri ; Robilliart, Etienne
Author_Institution
IEMN/ISEN, CNRS, Lille, France
fYear
1994
Firstpage
148
Lastpage
151
Abstract
In this work, two experimental methods used for the determination of the emitter and base series resistances are critically reviewed and compared to an accurate solution based on device simulations. In addition, the sensitivity of the series resistances on the potential barriers present at the emitter polysilicon/monocrystal interface is investigated
Keywords
electric resistance; base series resistance; device simulation; emitter polysilicon/monocrystal interface; emitter series resistance; polysilicon bipolar transistors; potential barriers; series resistances extraction schemes; Bipolar transistors; Circuits; Contact resistance; Current measurement; Electrical resistance measurement; Electron emission; Frequency; MONOS devices; Silicon; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-1316-X
Type
conf
DOI
10.1109/BIPOL.1994.587883
Filename
587883
Link To Document