DocumentCode
1620662
Title
Polarized radiation thermometry of silicon wafers near room temperature
Author
Sugawara, H. ; Iuchi, T.
Author_Institution
Toyo Univ., Kawagoe, Japan
Volume
1
fYear
2004
Firstpage
646
Abstract
Silicon semiconductor wafers near room temperature are semitransparent at a wavelength more than 1.1 /spl mu/m, which makes radiation thermometry near room temperature difficult. We have measured apparent radiances of silicon wafers with oxide film (SiO/sub 2/) near room temperature from the view point of spectral, directional and polarized properties, and obtained in turn apparent polarized emissivities and transmissivities of the wafers. Based on the experimental results, we have proposed radiation thermometry of silicon wafers near room temperature.
Keywords
blackbody radiation; emissivity; optical sensors; semiconductor technology; silicon; temperature measurement; thermometers; polarized emissivity; polarized radiation thermometry; room temperature; silicon semiconductor wafer;
fLanguage
English
Publisher
ieee
Conference_Titel
SICE 2004 Annual Conference
Conference_Location
Sapporo
Print_ISBN
4-907764-22-7
Type
conf
Filename
1491484
Link To Document