• DocumentCode
    1620662
  • Title

    Polarized radiation thermometry of silicon wafers near room temperature

  • Author

    Sugawara, H. ; Iuchi, T.

  • Author_Institution
    Toyo Univ., Kawagoe, Japan
  • Volume
    1
  • fYear
    2004
  • Firstpage
    646
  • Abstract
    Silicon semiconductor wafers near room temperature are semitransparent at a wavelength more than 1.1 /spl mu/m, which makes radiation thermometry near room temperature difficult. We have measured apparent radiances of silicon wafers with oxide film (SiO/sub 2/) near room temperature from the view point of spectral, directional and polarized properties, and obtained in turn apparent polarized emissivities and transmissivities of the wafers. Based on the experimental results, we have proposed radiation thermometry of silicon wafers near room temperature.
  • Keywords
    blackbody radiation; emissivity; optical sensors; semiconductor technology; silicon; temperature measurement; thermometers; polarized emissivity; polarized radiation thermometry; room temperature; silicon semiconductor wafer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SICE 2004 Annual Conference
  • Conference_Location
    Sapporo
  • Print_ISBN
    4-907764-22-7
  • Type

    conf

  • Filename
    1491484