Title :
A low local input power 1.9 GHz Si-bipolar quadrature modulator without any adjustment
Author :
Otaka, Shoji ; Yamaji, Takafumi ; Fujimoto, Ryuichi ; Takahashi, Chikau ; Tanimoto, Hiroshi
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
A 1.9 GHz quadrature modulator with on-chip 90° phase-shifter was fabricated in a silicon bipolar technology. An image-rejection ratio over 45 dB and a carrier feed-through below -40 dBc were attained at -15 dBm local input power from 2.7 V supply. A die size of quadrature modulator IC is 2.49 mm×2.14 mm
Keywords :
quadrature amplitude modulation; 1.9 GHz; 2.7 V; QMODs; Si; bipolar IC technology; carrier feed-through; die size; image-rejection ratio; local input power; on-chip 90° phase-shifter; portable wireless equipment; quadrature modulator; BiCMOS integrated circuits; Distortion; Energy consumption; Filters; Frequency synthesizers; Gallium arsenide; MESFETs; Phase modulation; Research and development; Silicon;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587887
