Title :
The importance of including lattice self-heating and hot-carrier transport in BJT simulation
Author :
Liang, Minchang ; Law, Mark E.
Author_Institution :
Florida Univ., Gainesville, FL, USA
Abstract :
As the size of VLSI devices shrinks, lattice self-heating and hot-carrier transport effects become significant in their operation. As a result, the drift-diffusion model which ignores local heating and models the hot-carrier transport effects with simple local field-dependent relationships begins to fail. Simulations were performed to demonstrate how these effects affect device operation, and the importance of simultaneously including both effects in device simulation is discussed
Keywords :
hot carriers; BJT simulation; VLSI devices; device simulation; drift-diffusion model; hot-carrier transport; lattice self-heating; Charge carrier processes; Energy exchange; Equations; Floods; Hot carrier effects; Hot carriers; Lattices; Semiconductor devices; Temperature; Thermodynamics;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587891
