• DocumentCode
    1620853
  • Title

    BiCMOS hfe degradation: causes and circuit solution

  • Author

    McAndrew, Colin C. ; Kizilyalli, Lsik C. ; Bude, Jeff D.

  • Author_Institution
    AT&T Bell Labs., Allentown, PA, USA
  • fYear
    1994
  • Firstpage
    197
  • Lastpage
    200
  • Abstract
    hfe degradation decreases BiCMOS speed and reliability. This paper presents the physical mechanisms of hfe degradation, and a new, simple circuit technique that increases BiCMOS reliability and allows BiCMOS technologies to have lower breakdown voltages
  • Keywords
    BiCMOS integrated circuits; BiCMOS; IC reliability; IC speed; breakdown voltages; common-emitter forward current gain; hfe degradation; physical mechanisms; BiCMOS integrated circuits; Charge carrier processes; Degradation; Electron emission; Electron traps; Hafnium; Hot carriers; Iron; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-1316-X
  • Type

    conf

  • DOI
    10.1109/BIPOL.1994.587893
  • Filename
    587893
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1620853