Effective sources of a spin-polarized current for spintronic devices

Author

Beletskii, N.N. ; Borysenko, S.A.

Author_Institution

Inst. of Radiophys. & Electron., Nat. Acad. of Sci. of Ukraine, Kharkov, Ukraine

Volume

1

fYear

2004

Firstpage

389

Abstract

In this paper we investigate theoretically a spin-polarized electron transport in a double-barrier resonant-tunneling heterostructure which consists entirely of Zn_1-xMn_xSe-like semimagnetic semiconductors with different concentrations of manganese ions in each layer of the heterostructure. The influence of the bias voltage and external constant magnetic field on the coefficient of spin polarization of the electron current has been investigated. The optimal concentration of manganese ions in the heterostructure, which ensures a high density and maximal coefficient of the electron current spin polarization in the double-barrier resonant-tunneling heterostructure has been determined.

Keywords

II-VI semiconductors; magnetoelectronics; manganese compounds; resonant tunnelling; resonant tunnelling devices; semiconductor heterojunctions; semimagnetic semiconductors; spin polarised transport; zinc compounds; ZnMnSe; double barrier resonant tunneling heterostructure; electron current; external constant magnetic field; heterostructure layer; high density coefficient; manganese ions; semimagnetic semiconductors; spin polarization coefficient; spin-polarized current; spin-polarized electron transport; spintronic devices; Electrons; Magnetic fields; Magnetic resonance; Magnetic semiconductors; Magnetoelectronics; Manganese; Polarization; Potential well; Resonant tunneling devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves, 2004. MSMW 04. The Fifth International Kharkov Symposium on

Print_ISBN

0-7803-8411-3

Type

conf

DOI

10.1109/MSMW.2004.1345902

Filename

1345902