Title :
Effective sources of a spin-polarized current for spintronic devices
Author :
Beletskii, N.N. ; Borysenko, S.A.
Author_Institution :
Inst. of Radiophys. & Electron., Nat. Acad. of Sci. of Ukraine, Kharkov, Ukraine
Abstract :
In this paper we investigate theoretically a spin-polarized electron transport in a double-barrier resonant-tunneling heterostructure which consists entirely of Zn1-xMnxSe-like semimagnetic semiconductors with different concentrations of manganese ions in each layer of the heterostructure. The influence of the bias voltage and external constant magnetic field on the coefficient of spin polarization of the electron current has been investigated. The optimal concentration of manganese ions in the heterostructure, which ensures a high density and maximal coefficient of the electron current spin polarization in the double-barrier resonant-tunneling heterostructure has been determined.
Keywords :
II-VI semiconductors; magnetoelectronics; manganese compounds; resonant tunnelling; resonant tunnelling devices; semiconductor heterojunctions; semimagnetic semiconductors; spin polarised transport; zinc compounds; ZnMnSe; double barrier resonant tunneling heterostructure; electron current; external constant magnetic field; heterostructure layer; high density coefficient; manganese ions; semimagnetic semiconductors; spin polarization coefficient; spin-polarized current; spin-polarized electron transport; spintronic devices; Electrons; Magnetic fields; Magnetic resonance; Magnetic semiconductors; Magnetoelectronics; Manganese; Polarization; Potential well; Resonant tunneling devices; Temperature;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves, 2004. MSMW 04. The Fifth International Kharkov Symposium on
Print_ISBN :
0-7803-8411-3
DOI :
10.1109/MSMW.2004.1345902
