Title :
Effect of current and voltage stress on the DC characteristics of SiGe-base heterojunction bipolar transistors
Author :
Liao, Kenneth ; Reif, Rafael ; Kamins, Theodore I.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
Abstract :
Degradation of SiGe-base HBTs under high-forward-current and reverse-bias stresses are investigated. The observations are explained using existing homojunction theories. Inclusion of Ge into the base may potentially improve the junction reliability of bipolar transistors
Keywords :
heterojunction bipolar transistors; DC characteristics; SiGe; current stress; heterojunction bipolar transistors; high-forward-current stresses; homojunction theories; junction reliability; reverse-bias stresses; voltage stress; Bipolar transistors; Degradation; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Laboratories; Silicon germanium; Stress; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587896
