• DocumentCode
    1621003
  • Title

    A 40 volt silicon complementary bipolar technology for high-precision and high-frequency analog circuits

  • Author

    Bashir, R. ; De Santis, J. ; Chen, D. ; Hébert, F. ; Ramde, A. ; Maghsoudnia, P. ; You, H. ; Meng, P. ; Moraveji, F. ; Razouk, R.

  • Author_Institution
    Nat. Semicond. Corp., Santa Clara, CA, USA
  • fYear
    1994
  • Firstpage
    225
  • Lastpage
    228
  • Abstract
    A high performance and low cost complementary bipolar technology has been developed for the realization of high-precision and high-frequency analog circuits. The technology, referred to as VIP-3 (Vertically Integrated PNP-3), offers transistors with typical BVceo of NPN and PNP transistors at 45 and 60 volts, respectively. In addition, the technology offers BVceo×ft/hfe×Va figures of merit in excess of 135 GHz·V/20,000 V for NPN and 130 GHz·V/6,500 V for PNP
  • Keywords
    silicon; 40 V; 45 V; 60 V; HF circuits; Si; Si complementary bipolar technolog; VIP-3; high performance low cost technology; high-frequency analog circuits; high-precision analog circuits; vertically integrated PNP-3; Analog circuits; Boron; Costs; Epitaxial growth; Epitaxial layers; Implants; Integrated circuit technology; Isolation technology; Operational amplifiers; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-1316-X
  • Type

    conf

  • DOI
    10.1109/BIPOL.1994.587900
  • Filename
    587900
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1621003