Title :
A 40 volt silicon complementary bipolar technology for high-precision and high-frequency analog circuits
Author :
Bashir, R. ; De Santis, J. ; Chen, D. ; Hébert, F. ; Ramde, A. ; Maghsoudnia, P. ; You, H. ; Meng, P. ; Moraveji, F. ; Razouk, R.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
A high performance and low cost complementary bipolar technology has been developed for the realization of high-precision and high-frequency analog circuits. The technology, referred to as VIP-3 (Vertically Integrated PNP-3), offers transistors with typical BVceo of NPN and PNP transistors at 45 and 60 volts, respectively. In addition, the technology offers BVceo×ft/hfe×Va figures of merit in excess of 135 GHz·V/20,000 V for NPN and 130 GHz·V/6,500 V for PNP
Keywords :
silicon; 40 V; 45 V; 60 V; HF circuits; Si; Si complementary bipolar technolog; VIP-3; high performance low cost technology; high-frequency analog circuits; high-precision analog circuits; vertically integrated PNP-3; Analog circuits; Boron; Costs; Epitaxial growth; Epitaxial layers; Implants; Integrated circuit technology; Isolation technology; Operational amplifiers; Silicon;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587900
