Title :
Technology and reliability issues of multilevel interconnects in bipolar, BiCMOS and CMOS VLSIC/ULSICs
Author :
Saxena, Arjun N. ; Ramkumar, K. ; Ghosh, Sumanta K. ; Bourgeois, Mark A.
Author_Institution :
Int. Sci. Co., Ballston Lake, NY, USA
Abstract :
It is argued that multilevel metallizations are the key to achieving bipolar, CMOS and BiCMOS VLSI/ULSICs with superior performance and higher packing density. It is also concluded that Al-based multilevel metallizations with SiO2 as the interlevel dielectric (ILD) are going to remain the most widely used VLSI/ULSI technology. The fundamental properties and limitations of multilevel metallizations are summarized, and solutions developed for many of the limitations are noted
Keywords :
integrated circuit metallisation; Al-SiO2; BiCMOS; CMOS IC; ULSI; VLSI; bipolar IC; interlevel dielectric; multilevel interconnects; multilevel metallizations; performance; reliability; Aluminum integrated circuit conductors;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617458
