Title :
Process integration technology for low process complexity BiCMOS using trench collector sink
Author :
Yoshida, Hiroshi ; Suzuki, Hisamitsu ; Kinoshita, Yasushi ; Imai, Kiyotaka ; Akimoto, Takeshi ; Tokashiki, Ken ; Yamazaki, Tohru
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
A BiCMOS process integration technology featuring a W-plug trench collector sink simultaneously formed with an emitter defining step is presented. This technology can provide a low resistance collector sink without any additional process steps to form the collector sink and realizes a low cost 0.35 μm BiCMOS device with only 11 photo-masks
Keywords :
BiCMOS integrated circuits; 0.35 micron; W; W-plug; low process complexity BiCMOS; low resistance collector sink; process integration technology; trench collector sink; BiCMOS integrated circuits; CMOS technology; Costs; Cutoff frequency; Dry etching; Fabrication; Laboratories; Plugs; Silicon; Tungsten;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587901
