Title :
A single-poly BiCMOS technology with 30 GHz bipolar fT
Author :
Wang, Chih Hsin ; Van der Velden, Jan
Author_Institution :
Dept. of Adv. Technol., Philips Semicond., Sunnyvale, CA, USA
Abstract :
We present process design and device performance of bipolar transistors embedded in a single-poly BiCMOS technology. The bipolar device possesses a CMOS-like morphology and is easily integrated into a CMOS-based process flow with two additional masks. The integrated process yields a structure with minimum topography. Process concerns associated with the conventional double-poly structure are therefore avoided. Shallow emitter and base junction depth are achieved through a conventional ion implantation approach with proper control of the thermal budget. Bipolar transistors featuring 31 GHz bipolar fT and 4 V BVceo are achieved. The technology thus developed has the highest fT in the category of single-polysilicon BiCMOS process ever reported
Keywords :
BiCMOS integrated circuits; 30 GHz; 4 V; Si; bipolar transistors; integrated process; ion implantation; polysilicon; shallow base junction depth; shallow emitter junction depth; single-poly BiCMOS technology; Annealing; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Fabrication; Implants; Ion implantation; Process design; Surfaces; Temperature;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587902
