DocumentCode
1621200
Title
Magneto-resistive elements-an alternative to floating gate technology
Author
Ranmuthu, I.W. ; Ranmuthu, K.T.M. ; Eray, M. ; Comstock, C.S. ; Hassoun, M.
Author_Institution
Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
fYear
1992
Firstpage
134
Abstract
Magnetoresistive elements have previously been fabricated and tested for storage of data. Due to the nonvolatile property of these elements they can be used to replace floating gate storage cells. A programmable logic array (PLA) using on-chip magnetoresistive elements is simulated and its layout shown to illustrate the applicability of these elements. The die size for the 6×16×4 PLA is 2000 μm×2000 μm with 2-μm technology. The PLA has a delay of 20 ns during normal operation. Programming time is 20 ns/cross point, and power up time is 1 μs
Keywords
logic arrays; magnetoresistive devices; 1 mus; 2 micron; 20 ns; PLA; data storage; delay; nonvolatile property; on-chip magnetoresistive elements; programmable logic array; programming time; shadow RAM cells; Circuits; Conductors; Differential amplifiers; Electric resistance; Logic arrays; Magnetic fields; Magnetic films; Magnetization; Programmable logic arrays; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on
Conference_Location
Washington, DC
Print_ISBN
0-7803-0510-8
Type
conf
DOI
10.1109/MWSCAS.1992.271314
Filename
271314
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